Structural Properties and Electrical Characteristics of p-n Junctions Based on Kesterite Cu2ZnSnS4 Layers for Thin-Film Solar Cells

In the present study, we provide useful data related to one of most promising materials in thin-film solar cell technologies: Cu2ZnSnS4 (CZTS) kesterite structures. Sol-gel spin coating and chemical bath deposition methods were used fabricate further investigate Mo/CZTS/CdS/ZnO/AZO heterostructures. order examine crystal structure samples, Raman scattering measurements using two excitation wavelengths (514.5 nm 785 nm) performed. Three bands CZTS found, as well that had its origin CdS. By laser ablation performing spectroscopy on these modified it was shown during manufacturing process a MoS2 interlayer formed between Mo layers. Our method proved layer multilayer device fabricated by solution-based can be decomposed, thus detailed analysis Subsequently, current-voltage curves investigated terms essential electrical properties glass/Mo/p-CZTS/n-CdS/ZnO/AZO junctions occurring current transport mechanisms. Finally, AFM acquired study surface topography studied samples. The images showed surfaces uniform grain structure.